- International families
- 9,0702015 to 2024
- Leading country
- United States1.2× the next
- All families
- 36khome filings included
- Over five years
- Rising2020 to 2024 against the five before
Year by year
Patent families by country of origin and the year of the earliest filing, 2000 to 2025; 2025 is a part year, still filling in. International families are those for which protection was sought beyond one country.
Volume
International patent families in the capability, by the year of the earliest filing.
Source: Global Institute for National Capability (GINC), 2026. Underlying patents from 107 patent offices, IFI CLAIMS and Google
Share by country
Each country's share of the year's international families, in per cent: the capability's five largest countries of origin, 2015 to 2024, and the rest of the world.
Source: Global Institute for National Capability (GINC), 2026. Underlying patents from 107 patent offices, IFI CLAIMS and Google
Country leaderboard
International patent families, 2015 to 2024, by country of origin. Growth compares the latest five full years with the five before.
Ten largest
United States
Taiwan
China
South Korea
Japan
Germany
United Kingdom
Netherlands
France
Israel
2,117
1,739
1,459
1,379
1,123
307
180
145
128
53
| 2000 to 2025 | ||||||
|---|---|---|---|---|---|---|
| 1 | United States | 2,117 | 23.3% | 1.4× | 5,913 | |
| 2 | Taiwan | 1,739 | 19.2% | 1.2× | 2,214 | |
| 3 | China | 1,459 | 16.1% | 2.6× | 22,131 | |
| 4 | South Korea | 1,379 | 15.2% | 1.7× | 1,952 | |
| 5 | Japan | 1,123 | 12.4% | 1.0× | 1,461 | |
| 6 | Germany | 307 | 3.4% | 1.4× | 430 | |
| 7 | United Kingdom | 180 | 2.0% | 1.0× | 271 | |
| 8 | Netherlands | 145 | 1.6% | 0.6× | 155 | |
| 9 | France | 128 | 1.4% | 0.6× | 149 | |
| 10 | Israel | 53 | 0.6% | 1.4× | 96 | |
| 11 | Switzerland | 52 | 0.6% | 3.0× | 64 | |
| 12 | Singapore | 51 | 0.6% | 1.8× | 82 | |
| 13 | Belgium | 49 | 0.5% | 2.1× | 55 | |
| 14 | Austria | 42 | 0.5% | 1.5× | 45 | |
| 15 | Canada | 39 | 0.4% | 1.6× | 75 | |
| 16 | Cayman Islands | 32 | 0.4% | 0.1× | 163 | |
| 17 | Italy | 24 | 0.3% | 0.5× | 29 | |
| 18 | India | 24 | 0.3% | 1.4× | 67 | |
| 19 | Sweden | 14 | 0.2% | 0.8× | 16 | |
| 20 | Finland | 14 | 0.2% | 0.8× | 18 | |
| 21 | Ireland | 10 | 0.1% | 1.5× | 14 | |
| 22 | Australia | 9 | 0.1% | 1.3× | 10 | |
| 23 | Hong Kong | 7 | 0.1% | 0.2× | 10 | |
| 24 | Malaysia | 7 | 0.1% | 6.0× | 11 | |
| 25 | Spain | 6 | 0.1% | 1.0× | 7 | |
| 26 | Portugal | 6 | 0.1% | 0.5× | 6 | |
| 27 | Türkiye | 5 | 0.1% | 1.5× | 7 | |
| 28 | Norway | 5 | 0.1% | – | 8 | |
| 29 | Saudi Arabia | 5 | 0.1% | 0.3× | 14 | |
| 30 | Russia | 3 | 0.0% | 2.0× | 13 | |
| 31 | Denmark | 2 | 0.0% | 1.0× | 2 | |
| 32 | Brazil | 2 | 0.0% | 1.0× | 6 | |
| 33 | Poland | 2 | 0.0% | – | 3 | |
| 34 | Czechia | 2 | 0.0% | 1.0× | 5 | |
| 35 | Hungary | 2 | 0.0% | 1.0× | 2 | |
| 36 | New Zealand | 1 | 0.0% | 0.0× | 1 | |
| 37 | South Africa | 1 | 0.0% | – | 1 | |
| 38 | Mexico | 0 | 0.0% | – | 1 |
Applicants
The largest applicants by international patent families, 2015 to 2024: across the world, then within each of the five countries with the most families in Semiconductor Design & EDA. Names are as held in the source and are not consolidated across subsidiaries.
Global
9,070 international families
TAIWAN SEMICONDUCTOR MFG CO LTD · Taiwan
SAMSUNG ELECTRONICS CO LTD · South Korea
TAIWAN SEMICONDUCTOR MFG · Taiwan
INTEL CORP · United States
SYNOPSYS INC · United States
QUALCOMM INC · United States
1,190
1,068
520
254
191
178
United States
2,117 international families
INTEL CORP
SYNOPSYS INC
QUALCOMM INC
IBM
SIEMENS IND SOFTWARE INC
MICRON TECHNOLOGY INC
252
190
178
146
90
76
Taiwan
1,739 international families
TAIWAN SEMICONDUCTOR MFG CO LTD
TAIWAN SEMICONDUCTOR MFG
UNITED MICROELECTRONICS CORP
REALTEK SEMICONDUCTOR CORP
MEDIATEK INC
TAIWAN INTEGRATED CIRCUIT MFG SHARE LIMITED COMPANY
1,175
518
137
80
54
35
China
1,459 international families
CHANGXIN MEMORY TECH INC
HUAWEI TECH CO LTD
BOE TECHNOLOGY GROUP CO LTD
SEMICONDUCTOR MFG INT SHANGHAI CORP
VAYO SHANGHAI TECH CO LTD
SEMICONDUCTOR MFG INT BEIJING CORP
148
97
38
35
29
27
South Korea
1,379 international families
SAMSUNG ELECTRONICS CO LTD
SK HYNIX INC
SAMSUNG DISPLAY CO LTD
SAMSUNG ELECTRONIC JOINT BASED CONSULTATION
SEOUL NAT UNIV R&DB FOUNDATION
ELECTRONICS & TELECOMMUNICATIONS RES INST
1,066
75
31
26
14
11
Japan
1,123 international families
FUJITSU LTD
SOCIONEXT INC
MITSUBISHI ELECTRIC CORP
RENESAS ELECTRONICS CORP
TOSHIBA KK
TOSHIBA CORP
131
131
84
81
60
59
Similar capabilities
The nine capabilities that share the most international patent families with Semiconductor Design & EDA, 2015 to 2024: the families counted in both as a share of those counted in either. Each card shows its five largest countries.
Critical Technology
Advanced Semiconductor Fabrication
2.8% shared · 4,003 families in both
Japan
United States
South Korea
Taiwan
China
44,951
23,299
22,064
19,873
15,776
Critical Technology
High-Performance & AI Computing
1.6% shared · 478 families in both
United States
China
South Korea
Japan
United Kingdom
8,142
3,957
2,955
2,347
895
Critical Technology
Advanced Packaging & Heterogeneous Integration
1.5% shared · 1,398 families in both
Japan
South Korea
United States
Taiwan
China
24,716
15,416
12,420
11,991
9,796
Critical Technology
Quantum Computing
1.2% shared · 177 families in both
United States
Japan
China
Germany
France
2,335
791
484
336
322
Critical Technology
Compound & Power Semiconductors
1.2% shared · 340 families in both
Japan
Taiwan
United States
China
South Korea
7,085
3,005
2,833
2,353
1,705
Critical Technology
Nanomaterials & Metamaterials
0.9% shared · 312 families in both
United States
South Korea
China
Japan
Taiwan
6,721
3,882
3,587
3,507
2,242
Critical Technology
Semiconductor Equipment & Materials
0.8% shared · 832 families in both
Japan
United States
South Korea
China
Taiwan
37,853
15,529
13,584
8,665
6,232
Critical Technology
Machine Learning & Foundation Models
0.6% shared · 721 families in both
United States
China
South Korea
Japan
Germany
32,358
20,768
15,108
13,257
5,948
Strategic Infrastructure
Production Systems
0.6% shared · 2,220 families in both
Japan
United States
China
Germany
South Korea
106,439
60,107
40,792
37,205
32,878
Crosswalk
How Semiconductor Design & EDA is matched to the patent classifications. The entries below were chosen for it; each stands for itself and everything beneath it in the scheme, 98 Cooperative entries in all. A patent family counts when any of its codes, in either scheme and at any office, falls under one of them. Codes since retired are placed under the entries that replaced them.
| Entry | Title in the scheme | Why it is chosen | CPC codes | IPC codes | Documents |
|---|---|---|---|---|---|
| G06F30/30 | Circuit design | Circuit design automation: logic, layout, verification | 28 | 28 | 213,917 |
| G06F2115/00 | Details relating to the type of the circuit | Circuit types addressed by design automation | 7 | none | 10,135 |
| G06F2117/00 | Details relating to the type or aim of the circuit design | Aims of circuit design, e.g. low power, testability | 7 | none | 3,676 |
| H10D89/10 | Integrated device layouts | Integrated circuit layouts | 2 | 1 | 44,217 |
| H10D84/90 | Masterslice integrated circuits | Gate arrays and standard-cell integrated circuits | 51 | 1 | 26,322 |
CPC and IPC codes are the codes in use on patent documents, at any office, that fall under the entry. Documents is the larger of the two schemes' counts of documents carrying one of them. An entry with no IPC codes can be told apart only in the Cooperative scheme.
The Cooperative codes in use that count towards Semiconductor Design & EDA: 95 codes on 298,267 documents. The full crosswalk is in the cpc-to-capability.csv download.
| Code | Title | Under entry | How placed | Documents |
|---|---|---|---|---|
| H10D89/10 | Integrated device layouts | H10D89/10 | In the scheme | 42,780 |
| G06F30/398 | Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] | G06F30/30 | In the scheme | 30,272 |
| G06F30/392 | Floor-planning or layout, e.g. partitioning or placement | G06F30/30 | In the scheme | 25,374 |
| G06F30/367 | Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods | G06F30/30 | In the scheme | 23,767 |
| G06F30/39 | Circuit design at the physical level | G06F30/30 | In the scheme | 18,195 |
| G06F30/30 | Circuit design | G06F30/30 | In the scheme | 15,797 |
| G06F30/394 | Routing | G06F30/30 | In the scheme | 15,149 |
| G06F30/33 | Design verification, e.g. functional simulation or model checking | G06F30/30 | In the scheme | 14,320 |
| G06F30/327 | Logic synthesis; Behaviour synthesis, e.g. mapping logic, HDL to netlist, high-level language to RTL or netlist | G06F30/30 | In the scheme | 11,300 |
| H10D84/907 | CMOS gate arrays | H10D84/90 | In the scheme | 8,215 |
| G06F30/34 | Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD] | G06F30/30 | In the scheme | 7,970 |
| G06F30/3308 | Design verification, e.g. functional simulation or model checking using simulation | G06F30/30 | In the scheme | 6,823 |
| G06F30/3312 | Timing analysis | G06F30/30 | In the scheme | 6,572 |
| G06F30/3323 | Design verification, e.g. functional simulation or model checking using formal methods, e.g. equivalence checking or property checking | G06F30/30 | In the scheme | 5,124 |
| G06F30/331 | Design verification, e.g. functional simulation or model checking using simulation with hardware acceleration, e.g. by using field programmable gate array [FPGA] or emulation | G06F30/30 | In the scheme | 4,127 |
| G06F30/36 | Circuit design at the analogue level | G06F30/30 | In the scheme | 3,830 |
| G06F2115/12 | Printed circuit boards [PCB] or multi-chip modules [MCM] | G06F2115/00 | In the scheme | 3,722 |
| G06F30/337 | Design optimisation | G06F30/30 | In the scheme | 3,102 |
| G06F30/347 | Physical level, e.g. placement or routing | G06F30/30 | In the scheme | 2,602 |
| G06F30/373 | Design optimisation | G06F30/30 | In the scheme | 2,573 |
| G06F30/396 | Clock trees | G06F30/30 | In the scheme | 2,502 |
| G06F30/31 | Design entry, e.g. editors specifically adapted for circuit design | G06F30/30 | In the scheme | 2,432 |
| H10D84/90 | Masterslice integrated circuits | H10D84/90 | In the scheme | 2,345 |
| G06F2115/02 | System on chip [SoC] design | G06F2115/00 | In the scheme | 2,313 |
| G06F30/333 | Design for testability [DFT], e.g. scan chain or built-in self-test [BIST] | G06F30/30 | In the scheme | 2,304 |
| H10D84/975 | Wiring regions or routing | H10D84/90 | In the scheme | 2,175 |
| G06F30/343 | Logical level | G06F30/30 | In the scheme | 2,055 |
| H10D84/903 | Masterslice integrated circuits comprising field effect technology | H10D84/90 | In the scheme | 1,972 |
| H10D84/998 | Input and output buffer/driver structures | H10D84/90 | In the scheme | 1,865 |
| G06F2115/08 | Intellectual property [IP] blocks or IP cores | G06F2115/00 | In the scheme | 1,737 |
| H10D84/981 | Power supply lines | H10D84/90 | In the scheme | 1,719 |
| G06F30/3315 | Design verification, e.g. functional simulation or model checking using static timing analysis [STA] | G06F30/30 | In the scheme | 1,606 |
| G06F30/32 | Circuit design at the digital level | G06F30/30 | In the scheme | 1,444 |
| H10D89/105 | Integrated device layouts adapted for thermal considerations | H10D89/10 | In the scheme | 1,437 |
| G06F2117/08 | HW-SW co-design, e.g. HW-SW partitioning | G06F2117/00 | In the scheme | 1,333 |
| G06F30/3953 | Routing detailed | G06F30/30 | In the scheme | 1,241 |
| G06F30/323 | Translation or migration, e.g. logic to logic, hardware description language [HDL] translation or netlist translation | G06F30/30 | In the scheme | 1,196 |
| G06F2115/06 | Structured ASICs | G06F2115/00 | In the scheme | 1,047 |
| G06F30/3947 | Routing global | G06F30/30 | In the scheme | 1,043 |
| G06F2115/10 | Processors | G06F2115/00 | In the scheme | 1,030 |
| H10D84/966 | Gate electrode terminals or contacts | H10D84/90 | In the scheme | 741 |
| G06F2117/12 | Sizing, e.g. of transistors or gates | G06F2117/00 | In the scheme | 713 |
| G06F2117/04 | Clock gating | G06F2117/00 | In the scheme | 684 |
| H10D84/974 | Layout specifications, i.e. inner core regions | H10D84/90 | In the scheme | 660 |
| G06F30/38 | Circuit design at the mixed level of analogue and digital signals | G06F30/30 | In the scheme | 602 |
| G06F30/35 | Delay-insensitive circuit design, e.g. asynchronous or self-timed | G06F30/30 | In the scheme | 595 |
| G06F2117/02 | Fault tolerance, e.g. for transient fault suppression | G06F2117/00 | In the scheme | 537 |
| H10D84/987 | Three levels of metal | H10D84/90 | In the scheme | 525 |
| H10D84/979 | Data lines, e.g. buses | H10D84/90 | In the scheme | 509 |
| H10D84/901 | Masterslice integrated circuits comprising bipolar technology | H10D84/90 | In the scheme | 494 |
| H10D84/961 | Substrate and well contacts | H10D84/90 | In the scheme | 468 |
| H10D84/953 | Sub-micron technology | H10D84/90 | In the scheme | 376 |
| H10D84/988 | Four or more levels of metal | H10D84/90 | In the scheme | 362 |
| H10D84/996 | Masterslice integrated circuits using combined field effect technology and bipolar technology | H10D84/90 | In the scheme | 348 |
| H10D84/912 | 4-T CMOS basic cells | H10D84/90 | In the scheme | 314 |
| H10D84/931 | FET isolation | H10D84/90 | In the scheme | 305 |
| H10D84/962 | Horizontal or vertical grid line density | H10D84/90 | In the scheme | 297 |
| H10D84/964 | Yield or reliability | H10D84/90 | In the scheme | 291 |
| G06F2115/04 | Micro electro-mechanical systems [MEMS] | G06F2115/00 | In the scheme | 268 |
| G06F2117/06 | Spare resources, e.g. for permanent fault suppression | G06F2117/00 | In the scheme | 250 |
| H10D84/938 | Implementation of memory functions | H10D84/90 | In the scheme | 242 |
| H10D84/914 | 5-T CMOS basic cells | H10D84/90 | In the scheme | 197 |
| H10D84/955 | Twin-tub technology | H10D84/90 | In the scheme | 196 |
| H10D84/985 | Two levels of metal | H10D84/90 | In the scheme | 189 |
| H10D84/991 | Latch-up prevention | H10D84/90 | In the scheme | 170 |
| H10D84/929 | Isolations | H10D84/90 | In the scheme | 164 |
| G06F2117/10 | Buffer insertion | G06F2117/00 | In the scheme | 149 |
| H10D84/968 | Macro-architecture | H10D84/90 | In the scheme | 109 |
| H10D84/992 | Noise prevention, e.g. preventing crosstalk | H10D84/90 | In the scheme | 106 |
| H10D84/959 | Connectability characteristics, i.e. diffusion and polysilicon geometries | H10D84/90 | In the scheme | 89 |
| H10D84/983 | Levels of metallisation | H10D84/90 | In the scheme | 85 |
| H10D84/937 | Implementation of digital circuits | H10D84/90 | In the scheme | 83 |
| H10D84/951 | Technology used, i.e. design rules | H10D84/90 | In the scheme | 81 |
| H10D84/916 | 6-T CMOS basic cells | H10D84/90 | In the scheme | 73 |
| H10D84/921 | 8-T CMOS basic cells | H10D84/90 | In the scheme | 67 |
| H10D84/957 | SOS or SOI technology | H10D84/90 | In the scheme | 64 |
| H10D84/925 | Microarchitecture relative P to N transistor sizes for delay time adaptation | H10D84/90 | In the scheme | 60 |
| H10D84/922 | Microarchitecture relative P to N transistor sizes | H10D84/90 | In the scheme | 51 |
| H10D84/911 | Basic cell P to N transistor counts | H10D84/90 | In the scheme | 43 |
| H10D84/924 | Microarchitecture relative P to N transistor sizes for current drive capability | H10D84/90 | In the scheme | 42 |
| H10D84/948 | Transmission gates | H10D84/90 | In the scheme | 31 |
| H10D84/971 | Number of core or basic cells in the macro (RAM or ROM) | H10D84/90 | In the scheme | 31 |
| H10D84/977 | Avoiding clock-skew or clock-delays | H10D84/90 | In the scheme | 29 |
| H10D84/942 | Resistors and capacitors | H10D84/90 | In the scheme | 28 |
| H10D84/935 | Degree of specialisation for implementing specific functions | H10D84/90 | In the scheme | 23 |
| H10D84/927 | Microarchitecture relative P to N transistor sizes for capacitive loading | H10D84/90 | In the scheme | 19 |
| G06F2115/00 | Details relating to the type of the circuit | G06F2115/00 | In the scheme | 18 |
| H10D84/972 | Distribution functions, e.g. sea of gates | H10D84/90 | In the scheme | 15 |
| H10D84/918 | 7-T CMOS basic cells | H10D84/90 | In the scheme | 12 |
| H10D84/941 | Implementation of analog circuits | H10D84/90 | In the scheme | 11 |
| G06F2117/00 | Details relating to the type or aim of the circuit design | G06F2117/00 | In the scheme | 10 |
| H10D84/905 | A3B5 or A3B6 gate arrays | H10D84/90 | In the scheme | 9 |
| H10D84/909 | Microarchitecture | H10D84/90 | In the scheme | 9 |
| H10D84/994 | Radiation hardened circuits | H10D84/90 | In the scheme | 8 |
| H10D84/944 | Hybrid analog or digital | H10D84/90 | In the scheme | 5 |